| PART |
Description |
Maker |
| MWS51141 MWS5114E3 MWS5114 MWS5114D1 MWS5114D2 MWS |
1024-Word x 4-Bit LSI Static RAM
|
INTERSIL[Intersil Corporation]
|
| D2148H |
High Speed 1024 x 4-Bit Static RAM
|
Intel
|
| TMP90PM38 |
A System Evaluation LSI With 8-Bit CPU,One-Time PROM(32968 x 8-Bit),RAM(1024 x 8-Bit)(系统评估大规模集成电路（集成8位CPU，一次可编程ROM(32968 x 8,RAM(1024 x 8)
|
Toshiba Corporation
|
| TMP90PM36 |
A System Evaluation LSI With 8-Bit CPU,One-Time PROM(32968 x 8-Bit),RAM(1024 x 8-Bit)(系统评估大规模集成电路（集成8位CPU，一次可编程ROM(32968 x 8,RAM(1024 x 8)
|
Toshiba Corporation
|
| IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| M5M532R16J-10 M5M532R16J-12 M5M532R16J-15 M5M532R1 |
0.5 in Diameter, 200mA Single Deck Rotary Switch
From old datasheet system
524288-BIT CMOS STATIC RAM
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| STK12C68-5KF35 STK12C68-5KF35I STK12C68-5KF35M STK |
8K x 8 AutoStore?/a> nvSRAM QuantumTrap?/a> CMOS Nonvolatile Static RAM
8K x 8 AutoStore垄芒 nvSRAM QuantumTrap垄芒 CMOS Nonvolatile Static RAM
8K x 8 AutoStore nvSRAM QuantumTrap CMOS Nonvolatile Static RAM
8K X 8 AUTOSTORE⒙ NVSRAM QUANTUMTRAP⒙ CMOS NONVOLATILE STATIC RAM
8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM
CAP 470PF 500V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
8K x 8 AutoStorenvSRAM QuantumTrapCMOS Nonvolatile Static RAM 8K的8自动存储非易失QuantumTrap⑩⑩的CMOS非易失性静态随机存储器
8K x 8 AutoStore??nvSRAM QuantumTrap??CMOS Nonvolatile Static RAM
8K X 8 NON-VOLATILE SRAM, 25 ns, PDIP28
8K X 8 NON-VOLATILE SRAM, 55 ns, PDSO28
8K X 8 NON-VOLATILE SRAM, 45 ns, CDIP28
|
SIMTEK
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
CYPRESS SEMICONDUCTOR CORP
|
| LC3514 LC3514A LC3514D LC3514E LC3514L |
RES 32.40K OHM MTLFILM .40W 1% T
1024 WORDS X 4 BITS HIGH-SPEED CMOS STATIC RAM
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| IC62LV25616LL IC62LV25616L IC62LV25616LL-70T IC62L |
256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| LC87F40C8A |
Internal 128K-byte FROM (ROM/CGROM), 2048 byte RAM, 1024-byte CGRAM, and 704×10-bit CRT Display RAM 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
